Electro-optical device with a gap of the light shielding layer being in a non-overlapping condition with the drain and the source in plan view

ABSTRACT

An electro-optical device includes a display electrode disposed in an image display region of a TFT array substrate, a pattern portion including at least one of wiring and a circuit element connected to the display electrode directly or through a pixel switching element and provided in a frame region, which defines the periphery of the image display region, and a lower shielding film for covering the TFT array substrate side of at least a portion of the pattern portion. Therefore, in the electro-optical device such as a liquid crystal device, a light-dark pattern due to the wiring and the circuit element provided in the frame region can be prevented from being projected near the edge of a display image.

This is a Divisional of application Ser. No. 10/259,390 filed Sep. 30,2002 now U.S. Pat. No. 7,061,567. The entire disclosure of the priorapplication is hereby incorporated by reference herein in its entirety.

BACKGROUND

The present invention relates to the technical field of anelectro-optical device such as a liquid crystal device or the like, andparticularly to the technical field of an electro-optical devicecomprising a frame shielding film which defines an image display region,and an electronic apparatus comprising the electro-optical device.

This type of electro-optical device comprises an element array substrateon which display electrodes such as pixel electrodes or stripeelectrodes, various wirings such as data lines and scanning lines,switching elements such as pixel-switching thin film transistors(referred to as “TFT” hereinafter) or thin film diodes (referred to as“TFD” hereinafter) are formed, and a counter substrate on which acounter electrode formed in stripes or formed over the entire surface,and a light shielding film are formed. The two substrates are disposedopposite to each other. Furthermore, an electro-optical material such asa liquid crystal is sealed between the two substrates with a sealingmaterial, and an image display region in which the display electrodesare arranged is located nearer to the center (i.e., a region of eachsubstrate which faces the liquid crystal) than a seal region in whichthe sealing material is present. Particularly, in a plan view of thedevice (as viewed from the direction perpendicular to the image displayregion), the frame region of the image display region is defined as aframe shape along the inner line of the seal region by the same film asthe shielding film provided on the counter substrate as described above.

A built-in peripheral circuit-type electro-optical device is alsogeneralized, in which peripheral circuits such as a scanning linedriving circuit, a data line driving circuit, a sampling circuit, aninspection circuit, etc. are formed in the frame region and theperipheral region in the periphery of the frame region of the elementarray substrate.

Therefore, wirings led from the image display region to the peripheralregion are present in the frame region. Furthermore, when some of theperipheral circuits such as the sampling circuit, and the like, whichare connected to the wirings, are formed in the frame region, thecircuit elements constituting some of the peripheral circuits arepresent in the frame region. Namely, a pattern comprising the wiringsand the circuit elements is present in the frame region.

The electro-optical device having the above construction is contained ina light-shielding mounting case comprising a display window providedcorresponding to the image display region so that the edge of thedisplay window is positioned near the center line of the frame region.

SUMMARY

However, in the above-described electro-optical device, the patterncomprising the wirings and the circuit elements which are present in theframe region of the element array substrate, is formed by patterning aconductive film such as an Al film or the like. Therefore, inapplication to a projector in which incident light has high strength andcontains a large quality of oblique components, the incident light isreflected by the surface of the pattern portion or passes through spacesof the pattern portion according to the reflectance. The light reflectedby the pattern portion is reflected by a frame shielding film ofchromium (Cr) provided on the counter substrate. Furthermore, theinternally reflected light reflected by the frame shielding film and thelight passing through the pattern portion are reflected by the back ofthe element array substrate to produce reflected light (i), and theinternally reflected light reflected by the frame shielding film and thelight passing through the pattern portion are reflected by opticalelements provided on the emission side of the electro-optical device,such as a polarizing plate, a retardation plate, dustproof glass, etc.,to produce reflected light (ii). In a multi-substrate projectorcomprising a light valve comprising a plurality of electro-opticaldevices, light emitted from another electro-optical device passesthrough a synthetic optical system and is reflected by the patternportion and the frame shielding film to produce internally reflectedlight (iii). These lights (i), (ii), and (ii) are finally mixed withemitted light to emit light from the electro-optical device.

Consequently, there is a problem in which a light-dark pattern (forexample, light-dark fringe patterns when a plurality of wirings arearrayed) is projected near the edge of a display image corresponding toreflection from or transmission through the pattern portion. Inaddition, the surface of the pattern portion comprising the wirings andthe circuit elements has unevenness corresponding to the unevenness ofan under surface and the shape of the pattern itself. Therefore,internally reflected light reflected by the uneven surface produces alight-dark pattern by interference of light, and thus the light-darkpattern finally mixed in emitted light becomes further remarkedaccording to the structure of the pattern portion.

In order to conceal the light-dark pattern projected by internalreflection from the wirings, a wide frame shielding film must be formedso as to define the frame region to be significantly wider than theregion on the substrate on which the pattern portion to be concealed ispresent. Therefore, it is difficult to comply with the basic requirementfor the electro-optical device to ensure as a wide image display regionas possible on the limited region of the substrate. Furthermore, inconsideration of the fact that the return light and the internallyreflected light are reflected by the surface of the frame shieldingfilm, which faces the element array substrate, and finally mixed aslight having a light-dark pattern with emitted light, it istheoretically difficult to completely conceal the light-dark pattern bysimply widening the frame shielding film.

The present invention has been achieved for solving the above-describedproblem, and an object of the present invention is to provide anelectro-optical device capable of preventing a light-dark pattern due toa pattern portion comprising wirings and circuit elements provided on aframe region from being projected outside a display image, and variouselectronic apparatus each comprising the electro-optical device.

In order to achieve the object, in a first aspect of the presentinvention, an electro-optical device comprises display electrodesarranged in an image display region of a substrate, a pattern portioncomprising at least either of wiring and circuit elements connected tothe display electrodes directly or through pixel switching elements andprovided in a frame region, which defines the periphery of the imagedisplay region, and a lower shielding film for covering the substrateside of at least a portion of the pattern portion.

In the electro-optical device in the first aspect of the presentinvention, for example, wirings such as data lines and scanning linesare led from the image display region and arranged in the frame region.Besides the wirings or in addition to the wirings, transistors orcircuit elements such as TFTs or TFDs, which constitute at least some ofperipheral circuits connected to the lead wirings, are arranged in theframe region. Therefore, image signals are supplied to the displayelectrodes such as pixel electrodes through the wirings and the circuitelements provided in the frame region, directly or through the pixelswitching elements such as TFTs, to permit active matrix driving orpassive matrix driving.

Particularly, in application to a projector in which incident light hashigh strength and contains a large amount of oblique components, theincident light is reflected by the surface of the pattern portion, whichis formed by patterning a conductive film, for example, comprising an Alfilm, or passes through spaces of the pattern portion according to thereflectance of the pattern potion. However, in the present invention, ina portion of the frame region, the substrate side of at least a portionof the pattern portion comprising the wirings and the circuit elementsis covered with the lower shielding film. Therefore, of the incidentlight reflected by the pattern portion or passing through the spaces ofthe pattern portion, the quantity of light mixed with final emittedlight for display directly or after internal refection is decreased by aquantity corresponding to the quantity of light absorbed or reflected bythe lower shielding film. More specifically, in a multi-substrateprojector, for internally reflected light resulting from furtherreflection of return light by the pattern portion and the frameshielding film, the quantity of the internally reflected light mixedwith final emitted light for display is decreased by a quantitycorresponding to the quantity of light absorbed or reflected by thelower shielding film.

Particularly, the surface of the pattern portion comprising the wiringsand the circuit elements has unevenness corresponding to the unevennessof the lower surface or the shape of the pattern itself, and thusinternally reflected light reflected by the uneven surface has alight-dark pattern due to interference of light. However, the light-darkpattern can be decreased by absorption or reflection by the lowershielding film.

As described above, in the electro-optical device of the presentinvention, the light-dark pattern projected outside the display imagedue to the pattern portion comprising the wirings and the circuitelements provided in the frame region can be decreased. Therefore, theframe shielding film need not be widened for concealing the light-darkpattern projected near the edge of the display image, thereby securingthe wide image display region in the limited region on the substrate.

In addition, in the electro-optical device of the present invention, thelower shielding film is provided on a portion facing the patternportion, not provided over the entire frame region, and thus theoccurrence of stress can be decreased as compared with a case in whichthe lower shielding film is formed over the entire frame region.

In the electro-optical device in the first aspect of the presentinvention, the frame shielding film is provided above the patternportion in the frame region.

In this case, for example, the frame shielding film comprises a built-inshielding film formed on the substrate, or a shielding film formed onthe counter substrate opposing the substrate through the electro-opticalmaterial such as the liquid crystal, and the frame region can be definedby the frame shielding film provided above the pattern portion.Particularly, the light-dark pattern projected outside the display imageby internally reflected light reflected by the inner plane of the frameshielding film according to the pattern portion can be decreased by thelower shielding film disposed below the pattern portion.

In the electro-optical device in the first aspect of the presentinvention, the lower shielding film is provided on the flat surface ofthe substrate directly or through a flat underlying insulating film.

In this case, the lower shielding film is formed provided on the flatsurface of the substrate directly or through the flat underlyinginsulating film, and thus the surface of the lower shielding film hassubstantially no unevenness. Therefore, even if return light from theback side of the substrate and internally reflected light are partiallyreflected by the lower shielding film, and mixed with final emittedlight for display, the light-dark pattern due to interference can bedecreased because light reflected by the flat lower shielding film hasless interference.

In the electro-optical device in the first aspect of the presentinvention, the circuit elements include first transistors, and each ofthe display electrodes comprises a pixel electrode. The electro-opticaldevice further comprises second transistors connected as the pixelswitching elements to the pixel electrodes, the wirings being connectedto the second transistors.

In this case, image signals are supplied to the second transistorsthrough at least some of the peripheral circuits, for example, such as asampling circuit, a scanning line driving circuit, a data line drivingcircuit, an inspection circuit, a pre-charge circuit, etc., all of whichare arranged in the frame region and comprise the first transistors.Switching of the pixel electrodes is controlled by the secondtransistors to permit active matrix driving.

In the electro-optical device in the first aspect of the presentinvention, the same film as the lower shielding film is provided belowthe channel region of each of the second transistors.

In this case, the lower side of the channel region of each of the secondtransistors serving as the pixel switching elements respectivelyconnected to the pixel electrodes is covered with the lower shieldingfilm, and it is thus effectively prevent the phenomenon that returnlight is incident on the channel regions to produce a light leakagecurrent, preventing a change in the characteristics of the secondtransistors. Incident light incident on the channel regions of thesecond transistors from above may be cut off by the built-in film formedon the substrate, the wirings comprising an Al shielding film or thelike, and the shielding film provided on the counter substrate, withoutany problem. Particularly, the lower shielding film for shielding thesecond transistors in the pixel region and the lower shielding film forpreventing the occurrence of the light-dark pattern in the frame regioncomprise the same film, and can thus be formed by the same productionstep, thereby simplifying the laminated structure on the substrate andthe manufacturing process.

In the electro-optical device in the first aspect of the presentinvention, the lower shielding film comprises a light-absorbing film.

In this case, when return light is incident on the surface of thesubstrate-side surface of the lower shielding film, reflected light isdecreased by absorption by the lower shielding film. Therefore, evenwhen the reflected light is finally mixed with emitted light fordisplay, the light-dark pattern based on the reflected light can bedecreased.

In this case, the light-absorbing film may contain at least one of apolysilicon film and a high-melting-point metal film.

In this construction, the light-absorbing film having an excellentlight-absorbing function can relatively easily be formed.

In the electro-optical device in the first aspect of the presentinvention, the lower shielding film is formed in an island-like shape.

In this case, the lower shielding film is formed in separated islands,and thus the occurrence of stress due to the presence of the lowershielding film can be reduced to improve manufacture yield andreliability of the device, as compared with a case in which the lowershielding film is formed over the entire frame region.

In the electro-optical device in the first aspect of the presentinvention, the lower shielding film may comprise a conductive film.

In this case, the lower shielding film comprises the conductive film,and can thus be used not only as the shielding film but also as thewiring or the like.

When the lower shielding film comprises the conductive film, a fixedpotential may be supplied to at least a portion of the lower shieldingfilm.

In this construction, it is possible to prevent a variation in thepotential of the lower shielding film from adversely affecting thewirings and the circuit elements in the frame region.

Alternatively, when the lower shielding film comprises the conductivefilm, at least portions of the lower shielding film, which are depositedbelow the first transistors, have a floating potential.

In this construction, the portions of the lower shielding film, whichare deposited below the first transistors, have a floating potential,and it is thus possible to effectively prevent a variation in thepotential of the lower shielding film from adversely affecting thecharacteristics of the first transistors.

In this case, the portions of the lower shielding film, which aredeposited below the first transistors, may be formed to includeisland-like portions which separate the portions of the lower shieldingfilm, which face the source electrodes of the first transistors, fromthe portions of the lower shielding film, which face the drainelectrodes of the first transistors.

In this construction, the island-like portions of the lower shieldingfilm separate the portions of the lower shielding film, which face thesource electrodes of the first transistors, from the portions of thelower shielding film, which face the drain electrodes of the firsttransistors, thereby decreasing capacitance coupling between the sourceelectrodes and the drain electrodes due to the parasitic capacitancebetween the lower shielding film and the source electrodes, and theparasitic capacitance between the lower shielding film and the drainelectrodes. Therefore, high transistor characteristics can be obtainedfrom the first transistors.

When the lower shielding film comprises the conductive film, at leastthe portions of the lower shielding film, which are deposited below thefirst transistors, may be formed to have slits which separate theportions of the lower shielding film, which face the source electrodesof the first transistors, from the portions of the lower shielding film,which face the drain electrodes of the first transistors.

In this construction, the slits of the lower shielding film separate theportions of the lower shielding film, which face the source electrodesof the first transistors, from the portions of the lower shielding film,which face the drain electrodes of the first transistors, therebydecreasing capacitance coupling between the source electrodes and thedrain electrodes due to the parasitic capacitance between the lowershielding film and the source electrodes, and the parasitic capacitancebetween the lower shielding film and the drain electrodes. Therefore,high transistor characteristics can be obtained from the firsttransistors.

When the lower shielding film comprises the conductive film, the lowershielding film may be formed so as not to be deposited below the channelregions of the first transistors.

In this construction, the lower shielding film is not disposed below thechannel regions of the first transistors, and it is thus possible toeffectively prevent a variation in the potential of the lower shieldingfilm from adversely affecting the characteristics of the firsttransistors.

When the lower shielding film comprises the conductive film, at leastthe portions of the lower shielding film, which are deposited below thechannel regions of the first transistors, may have the gate potential ofthe first transistors.

In this construction, the portions of the lower shielding film, whichare deposited below the channel regions of the first transistors, havethe gate potential of the first transistors, and the gate electrodes ofthe first transistors can be formed above the lower shielding film toform back channels by those portions of the lower shielding film.Therefore, the characteristics of the first transistors can be improved.

In the electro-optical device in the first aspect of the presentinvention, the lower shielding film is formed to extend from the outeredge of the image display region to the peripheral side by apredetermined width which is previously set according to the incidenceangle of incident light applied to the frame region.

In this case, for example, in application to a projector for extendedprojection, the incidence angle of incident light applied to the frameregion is increased, and the lower shielding film is formed to extendfrom the outer edge of the image display region to the peripheral sideby the predetermined width previously set according to the incidenceangle. Namely, in the frame region, the lower shielding film can beformed only in a region necessary for preventing the light-dark patternaccording to the incidence angle.

However, in some cases, the effect of the present invention, i.e., theeffect of preventing projection of any image, which should not bebasically displayed, outside the display image, cannot be sufficientlyachieved only by the lower shielding film covering the pattern portionas described above. Namely, in the region outside the pattern formationregion, i.e., in the region in which the wirings and the circuitelements are not formed, there is no light shield, thereby allowingincident light to pass through that region. The passing light reachesthe region outside the display image to project a dim light image aroundthe display image, thereby possibly deteriorating the appearance of theimage.

Therefore, in order to achieve the object, in a second aspect of thepresent invention, an electro-optical device comprises displayelectrodes arranged in an image display region of a substrate, a patternportion comprising at least either of wiring and circuit elementsconnected to the display electrodes directly or through pixel switchingelements and provided in a frame region which defined the periphery ofthe image display region, a first lower shielding film for covering thesubstrate side of at least a portion of the pattern portion, and asecond lower shielding film comprising the same film as the first lowershielding film and formed in the frame region except in the region wherethe pattern portion is formed.

In the electro-optical device in the second aspect of the presentinvention, for example, wirings such as data lines and scanning linesare led from the image display region and arranged in the frame region.Besides the wirings or in addition to the wirings, transistors orcircuit elements such as TFTs or TFDs, which constitute at least some ofperipheral circuits connected to the led wirings, are arranged in theframe region. Therefore, image signals are supplied to the displayelectrodes such as pixel electrodes through the wirings and the circuitelements provided in the frame region, directly or through the pixelswitching elements such as TFTs, to permit active matrix driving orpassive matrix driving.

Particularly, in application to a projector in which incident light hashigh strength and contains a large amount of oblique components, asdescribed above, the incident light is reflected by the pattern portionor passes through spaces of the pattern portion, and is then projectedon an image, deteriorating the appearances of the image. Furthermore, inthe region other than the pattern formation region, i.e., in the regionin which the wirings and the circuit elements are not formed, there isno light shield, thereby allowing incident light to pass through thatregion.

However, in the present invention, the probability that light isreflected by the pattern portion or passing through the spaces of thepattern portion, and mixed with light for forming an image can bedecreased by absorption or reflection by the lower shielding film. Thisis the same as described above with respect to the electro-opticaldevice in the first aspect of the present invention. Particularly, inthe present invention, the second lower shielding film is formed in theregion in except the region where the pattern portion is formed, thepassing light can be cut off, that is, the light can be absorbed orreflected by the second lower shielding film. Therefore, in the presentinvention, it is possible to prevent the phenomenon that a dim lightimage appears around the display image, thereby displaying a highquality image with a good appearance.

In addition, the first lower shielding film and the second lowershielding film comprise the same film, thereby simplifying themanufacturing process or decreasing the manufacturing cost.

In order to achieve the object, in a third aspect of the presentinvention, an electro-optical device comprises display electrodesarranged in an image display region of a substrate, a pattern portioncomprising at least either of wiring and circuit elements connected tothe display electrodes directly or through pixel switching elements andprovided in a frame region which defined the periphery of the imagedisplay region, a lower shielding film for covering the substrate sideof at least a portion of the pattern portion, an in-region shieldingfilm comprising the same film as the lower shielding film and formed tocover the substrate sides of the channel regions of second transistorsserving as the pixel switching elements, and an out-of-region shieldingfilm comprising the same film as the lower shielding film and thein-region shielding film and formed in at least a portion of aperipheral region around the image display region, the peripheral regionincluding the frame region.

In the electro-optical device in the third aspect of the presentinvention, for example, wirings such as data lines and scanning linesare led from the image display region and arranged in the frame region.Besides the wirings or in addition to the wirings, transistors orcircuit elements such as TFTs or TFDs, which constitute at least some ofperipheral circuits connected to the led wirings, are arranged in theframe region. Therefore, image signals are supplied to the displayelectrodes such as pixel electrodes through the wirings and the circuitelements provided in the frame region, directly or through the pixelswitching elements such as TFTs, to permit active matrix driving orpassive matrix driving.

Particularly, in the present invention, the three types of the shieldingfilms, i.e., the lower shielding film, the in-region shielding film, andthe out-of-region shielding film, are formed by using the same film. Ofthese shielding films, the lower shielding film avoids the lightreflected by the pattern portion or passing through the spaces of thepattern portion from being mixed with the image, as described above withrespect to the electro-optical device in the first aspect of the presentinvention. This can decrease the light-dark pattern projected near theedge of the display image.

On the other hand, the in-region shielding film increases the lightresistance of the second transistors as the pixel switching elementsformed in the image display region. Namely, the in-region shielding filmis formed to cover the substrate sides of at least the channel regionsof the second transistors, and thus prevents incidence of light on thechannel regions and suppresses the occurrence of a light leakage currentfrom the channel regions. It is thus possible to prevent the occurrenceof a change in the characteristics of the second transistors, orflickering of an image due to operation error or the like. Therefore,the quality of the display image can be improved.

Furthermore, in the present invention, the out-of-region shielding filmis formed in the peripheral region around the image display region. Theout-of-region shielding film is an idea including the lower shieldingfilm, and is different from the lower shielding film in that theformation region of the out-of-region shielding film is not limited tothe frame region. The out-of-region shielding film can cut off thetravel of light passing through the periphery (i.e., the peripheralregion) of the image display region. Therefore, in the presentinvention, it is possible to more effectively prevent the phenomenonthat a dim light image occurs around the display image, therebypermitting the display of a high-quality image with a good appearance.

Furthermore, in the present invention, all the lower shielding film, thein-region shielding film, and the out-of-region shielding film areformed by using the same film, i.e., simultaneously formed in themanufacturing process, thereby simplifying the manufacturing process ordecreasing the manufacturing cost, as compared with a case in whichthese films are separately formed.

In the electro-optical device in the third aspect of the presentinvention, the out-of-region shielding film includes the second lowershielding film comprising the first lower shielding film and formed inthe frame region except in the region in which the pattern portion isformed.

In this case, the second lower shielding film formed in the frame regionexcept in the region in which the pattern portion is formed can preventthe passage of light which cannot be sufficiently prevented only by thefirst lower shielding film. Namely, in the region in which the patternportion comprising the wirings and the circuit elements is not formed,unconditional passage of incident light can be prevented. Therefore, inthe present invention, it is possible to more effectively prevent thephenomenon that a dim light image appears around the display image,thereby displaying a high quality image with a good appearance.

In the electro-optical device in the third aspect of the presentinvention, peripheral circuits for driving the display electrodes areprovided in the peripheral region so as to be connected to the patternportion, and the out-of-region shielding film is formed in a regionother than the region in which a second pattern portion is formed forconnecting at least a pair of wirings, a pair of circuit elementsconstituting the peripheral circuits, and a pair of wiring and circuitelement.

In this case, the out-of-region shielding film is formed in the regionexcept in the region in which the second pattern portion is formed forconnecting at least a pair of wirings, a pair of circuit elementsconstituting the peripheral circuits, and a pair of wiring and circuitelement. Namely, in this case, the out-of-region shielding film includesa portion formed to “fill” a portion of the peripheral region, where noelement is basically formed. Therefore, the out-of-region shielding filmcan further decease the occurrence of passage of the “passing” light.

In the portion where the wirings and the circuit elements constitutingthe peripheral circuits are formed, “direct” passage of light isprevented by the wirings and the circuit elements (i.e., the passage oflight is cut off by the wirings and the circuit elements to someextent). Therefore, the out-of-region shielding film can be formed in anappropriate and necessary portion. It is thus possible to realize arelative decease in the area of the shielding film, and a decrease inthe action of internal stress of the out-of-region shielding film.

According to circumstance, the out-of-region shielding film may beformed in the region where the second pattern is formed. In this case,the out-of-region shielding film is formed over the entire region tocause the defect that the problem of internal stress becomes remarked.However, as described above with respect to the pattern portion, lightis also absorbed or reflected by the second pattern portion, exhibitinga reasonable meaning. Namely, from the viewpoint of the prevention ofmixing of light absorbed or reflected by the second pattern portion withlight for forming the image, it is meaningful to form the out-of-regionshielding film in the region where the second pattern portion is formed.In this case, it is proper to briefly express that “the out-of-regionshielding film is formed to cover the entire peripheral region.”

In the electro-optical device in the second or third aspect of thepresent invention, the out-of-region shielding film is formed inislands.

In this case, the out-of-region shielding film is formed in islands, andthus the internal stress of the film can be apparently decreased, ascompared with the shielding film formed over the entire region.Therefore, it is possible to prevent a trouble in which theout-of-region shielding film is broken by its own internal stress, or atrouble in which the internal stress acts on other elements (forexample, an interlayer insulating film) present around the out-of-regionshielding film to cause cracks.

Particularly, in this case, the distance between the adjacent islands is4 μm or less.

In this construction, the distance between the islands of theout-of-region shielding film is appropriately set. The reason for thisis described in detail below. When the shielding film is formed inislands, light possibly passes through the spaces between the islands.For example, return light incident on the back of the substrate possiblypasses through the spaces. In this case, the passing light is reflectedby the frame shielding film or the like provided at the back and againpasses through the spaces to be possibly mixed with light for formingthe image. However, in the present invention, the distance between theislands is 4 μm or less, and thus the above-described possibility lessoccurs. Namely, because of the relatively narrow spaces of 4 μm or less,there is substantially no probability that light passing through thespaces is reflected by the element provided at the back and again passesthrough the spaces. Also, incident light, which is not return light,possibly passes through the spaces directly. However, in this case, theinfluence on the image can be minimized because of the relatively smalldistance.

Therefore, in the present invention, the function of the shieldingfilms, i.e., the function to prevent the occurrence of a light imagearound the display image, can be sufficiently exhibited while obtainingthe function of the islanded the shielding film, i.e., the function todecrease the internal stress.

For the above-described reason, in the present invention, the distancebetween the adjacent islands is more preferably 2 μm or less.

The electro-optical device in the second or third aspect of the presentinvention may further comprise a mounting case for mounting theelectro-optical device, the mounting case having a display window formedcorresponding to the image display region, wherein at least one of thesecond lower shielding film and the out-of-region shielding film isformed in at least a portion of the region between the edge of thedisplay window and the edge of the image display region.

In this case, the mounting case has the display window formed so thatthe image display region can be seen from the outside of theelectro-optical device. Namely, in the display window portion includingthe image display region, light is substantially possibly transmitted,while in the other portions, light is cut off by the material (forexample, preferably a metal material such as magnesium or an alloythereof) constituting the mounting case. This means that the presence oflight reflected by the pattern portion, light passing through thepattern portion, or light passing through the region other than theregion in which the pattern portion is formed, need not be taken intoaccount as far as the portion other than the display window isconcerned. However, in the display window except in the image displayregion, the above light must be taken into consideration.

In the present invention, at least one of the second shielding film andthe out-of-region shielding film (simply referred to as the “shieldingfilm of the present invention” hereinafter) is formed in at least aportion of the region between the edge of the display window and theedge of the image display region, and thus the above-described functionscan be exhibited, and effective shielding can be achieved. At the sametime, this means that the shielding film of the present invention may beformed in an appropriate necessary area, thereby realizing relativenarrowing of the area. Therefore, the internal stress of the shieldingfilm can be further decreased, thereby further improving the reliabilityof the device.

In the electro-optical device in the second or third aspect of thepresent invention, the lower shielding film, the second lower shieldingfilm, the in-region shielding film or the out-of-region shielding filmcan be provided with the same characteristics as the lower shieldingfilm of the electro-optical device in the first aspect of the presentinvention. Namely, such a shielding film may be formed on a flatsubstrate or underlying insulating film, may comprise a light-absorbingfilm, particularly at lest one of a polysilicon film and ahigh-melting-point metal film, may comprise a conductive film, or mayhave a fixed potential or floating potential. In this case, clearly, thesame functions as described above can be obtained in the electro-opticaldevice in the second or third aspect of the present invention.

The electro-optical device in the second or third aspect of the presentinvention further comprises a frame shielding film disposed above thepattern portion in the frame region, the frame shielding film comprisingaluminum.

In this case, the frame region can be defined by the frame shieldingfilm disposed above the pattern portion and comprising, for example, abuilt-in shielding film formed on the substrate, or a shielding filmformed on the counter substrate opposing the substrate with anelectro-optical material such as a liquid crystal provided therebetween.

Particularly, in the present invention, the frame shielding filmcomprises at least aluminum, and thus light is easily reflected to lessaccumulate heat in the electro-optical device. Therefore, for example,the stable operation of a thin film transistor serving as a pixelswitching element can be secured, thereby permitting the stableoperation of the electro-optical device over a relatively long period oftime.

However, with the frame shielding film comprising such a material havinghigh light reflectivity, it is said that the occurrence of thelight-dark pattern projected around the display image or the occurrenceof a dim light image appearing near the edge of the image becomesfurther remarked.

However, in the present invention, the light-dark pattern projectedoutside the display image due to the internally reflected light, whichis reflected by the inner surface of the frame shielding film, accordingto the pattern portion can be decreased by the lower shielding filmdisposed below the pattern portion. Furthermore, in the presentinvention, even when the internally reflected light reflected by theinner surface of the frame shielding film passes directly through thesubstrate, the second lower shielding film or the out-of-regionshielding film can suppress the occurrence of a dim light imageappearing near the edge of the display image.

In order to achieve the object of the present invention, an electronicapparatus comprises each of the above-described electro-optical devicesof the present invention (including the various forms).

The electronic apparatus of the present invention comprises theelectro-optical device of the present invention, and thus the light-darkpattern due to the pattern portion comprising the wirings and thecircuit elements provided in the frame region is not projected withinthe display image. It is thus realize various electronic apparatusescapable of displaying high-quality images, such as a projection displaydevice, a liquid crystal television, a cellular phone, an electronicnotebook, a word processor, a view finder-type or monitor direct viewingvideo tape recorder, a work station, a picture phone, a POS terminal, atouch panel, etc.

The operation and advantages of the present invention will be madeappear from the description of embodiments below.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a plan view showing a TFT array substrate in anelectro-optical device together with components formed on the substrateaccording to a first embodiment of the present invention, as viewed fromthe counter substrate side.

FIG. 2 is a sectional view taken along line H–H′ in FIG. 1.

FIG. 3 is a block diagram showing equivalent circuits comprising variouselements provided on a plurality of pixels arranged in a matrix to forman image display region and wirings, and peripheral circuits in theelectro-optical device of the first embodiment of the present invention.

FIG. 4 is an enlarged partial sectional view showing a portion near theCR portion shown in FIG. 2.

FIG. 5 is an enlarged partial sectional view showing a portion of acomparative example, which corresponds to the vicinity of the CR portionshown in FIG. 2.

FIG. 6 is a schematic partial perspective view showing a frame shieldingfilm, data line lead wiring, and a lower shielding film in the portionshown in FIG. 4.

FIG. 7 a schematic partial perspective view showing a frame shieldingfilm and data line lead wiring in the portion of the comparative exampleshown in FIG. 5.

FIG. 8 is a plan view showing a plurality of adjacent pixel groups on aTFT array substrate on which data lines, scanning lines, pixelelectrodes, etc. are formed in an electro-optical device according to anembodiment of the present invention.

FIG. 9 is a sectional view taken along line E–E′ in FIG. 8.

FIG. 10 is an enlarged plan view showing a complementary transistorconstituting a peripheral circuit according to a second embodiment ofthe present invention.

FIG. 11 is a sectional view taken along line A–A′ in FIG. 10.

FIG. 12 is an enlarged plan view showing a complementary transistorconstituting a peripheral circuit according to a third embodiment of thepresent invention.

FIG. 13 is a sectional view taken along line B–B′ in FIG. 12.

FIG. 14 is an enlarged plan view showing a complementary transistorconstituting a peripheral circuit according to a fourth embodiment ofthe present invention.

FIG. 15 is a sectional view taken along line C–C′ in FIG. 14.

FIG. 16 is an enlarged plan view showing a complementary transistorconstituting a peripheral circuit according to a fifth embodiment of thepresent invention.

FIG. 17 is a sectional view taken along line D–D′ in FIG. 16.

FIG. 18 is an enlarged plan view showing a portion in a sixth embodimentof the present invention, which corresponds to the vicinity of theportion denoted by character A in FIG. 1.

FIG. 19 is an enlarged plan view showing a portion in a conventionalexample, which corresponds to the vicinity of the portion denoted bycharacter A in FIG. 1.

FIG. 20 is an enlarged sectional view showing a portion in the sixthembodiment of the present invention, which corresponds to the vicinityof the portion denoted by character CR in FIG. 2.

FIG. 21 is a schematic sectional view showing a color liquid crystalprojector as an example of a projection color display device accordingto an embodiment of the present invention.

REFERENCE NUMERALS

1 a . . . semiconductor layer, 1 a′ . . . channel region, 1 b . . .low-concentration source region, 1 c . . . low-concentration drainregion, 1 d . . . high-concentration source region, 1 e . . .high-concentration drain region, 2 . . . insulating film, 3 a . . .scanning line, 6 a . . . data line, 9 a . . . pixel electrode, 10 . . .TFT array substrate, 11 a . . . lower shielding film, 12 . . .underlying insulating film, 16 . . . alignment film, 20 . . . countersubstrate, 21 . . . counter electrode, 22 . . . alignment film, 30 . . .TFT, 50 . . . liquid crystal layer, 53 . . . frame shielding film, 70 .. . storage capacitor, 71 . . . relay layer, 81, 83, 85 . . . contacthole, 101 . . . data line driving circuit, 104 . . . scanning linedriving circuit, 114 . . . sampling circuit driving signal line, 115 . .. image signal line, 116 . . . lead wiring, 202 . . . TFT, 202 a–202 d .. . complementary TFT, 206 . . . lead wiring, 300 . . . capacitanceline, 301 . . . sampling circuit, 302 . . . TFT, 501 . . . lowershielding film

DETAILED DESCRIPTION OF EMBODIMENTS

Embodiments of the present invention will be described below withreference to the drawings. In each of the embodiments, anelectro-optical device of the present invention is applied to a liquidcrystal device.

(First Embodiment)

The whole construction of an electro-optical device according to a firstembodiment of the present invention is first described with reference toFIGS. 1 and 2. Here, a liquid crystal device in a built-in drivingcircuit-type TFT active matrix driving system is described as an exampleof electro-optical devices.

FIG. 1 is a plan view showing a TFT array substrate together with thecomponents formed thereon, as viewed from the counter substrate side,and FIG. 2 is a sectional view taken along line H–H′ in FIG. 1.

In FIGS. 1 and 2, the electro-optical device of this embodimentcomprises a TFT array substrate 10 and a counter substrate 20 which aredisposed opposite to each other. A liquid crystal layer 50 is sealedbetween the TFT array substrate 10 and the counter substrate 20, and theTFT array substrate 10 and the counter substrate 20 are bonded togetherwith a sealing material 52 provided in a seal region positioned aroundan image display region 10 a.

In order to bond the TFT array substrate 10 and the counter substrate 20together, the sealing material 52 comprises, for example, an ultravioletcuring resin, a thermal curing resin, or the like. The sealing material52 is coated on the TFT array substrate 10, and then cured byultraviolet irradiation, heating, or the like in the manufacturingprocess. Furthermore, the sealing material 52 comprises glass fibers orglass beads dispersed therein, for setting the distance (substrate gap)between the TFT array substrate 10 and the counter substrate 20 to apredetermined value. Namely, the electro-optical device of thisembodiment is suitable as a light valve for a small projector forextended display. However, when the electro-optical device is used as alarge liquid crystal device for 1× magnification display, such as aliquid crystal display or a liquid crystal television, such a gapmaterial may be contained in the liquid crystal layer 50.

Furthermore, a light-shielding frame shielding film 53 is provided inparallel with the inner side of the seal region in which the sealingmaterial 52 is disposed, so as to define the image display region 10 a.The frame shielding film may be partially or entirely provided as abuilt-in shielding film on the TFT array substrate 10.

Particularly, in this embodiment, a lower shielding film 501 ispartially formed below the frame shielding film 53. The lower shieldingfilm 501 is partially formed below the frame shielding film 53 to extendfrom the outer edge of the image display region 10 a to the outerperiphery. The structure and the shielding function of the lowershielding film 501 are described later.

In the peripheral region of the image display region 10 a, a data linedriving circuit 101 and external circuit connection terminals 102 areprovided along one side of the TFT array substrate 10 in a portionoutside the seal region in which the sealing material 52 is disposed.Furthermore, in the portion outside the seal region, scanning linedriving circuits 104 are provided along the two sides adjacent to theone side of the TFT array substrate 10. Also, a plurality of wirings 105is provided on the remaining side of the TFT array substrate 10, forconnecting the scanning line driving circuits 104 provided on the twosides of the image display region 10 a. As shown in FIG. 1, verticalconductive materials 106 having the function as a vertical conductionterminal between the two substrates are provided at the four corners ofthe counter substrate 20. On the other hand, on the TFT array substrate10, vertical conduction terminals are provided at positionscorresponding to the four corners of the counter substrate 20. This canachieve electrical conduction between the TFT array substrate 10 and thecounter substrate 20.

Particularly, in this embodiment, a sampling circuit 301 for samplingimage signals supplied from the data line driving circuit 101 isprovided in the frame region comprising the frame shielding film 53.Namely, the circuit elements described below, such as TFTs constitutingthe sampling circuit 301, are disposed in the frame region. Furthermore,various wiring portions such as a wiring portion extending from the datalines provided in the image display region 10 a to the sampling circuit301, a wiring portion extending from the data line driving circuit 101to the sampling circuit 301, and a wiring portion extending from thescanning lines provided in the image display region 10 a to each of thescanning line driving circuits 104 are disposed in the frame region.

In FIG. 2, on the TFT array 10, pixel switching TFTs, and the wiringssuch as the scanning lines and the data lines are formed for pixelelectrodes 9 a, and an alignment film is further formed on the pixelelectrodes 9 a. On the other hand, on the counter substrate 20, acounter electrode 21 and an alignment film as an uppermost layer areformed. The liquid crystal layer 50 comprises, for example, a nematicliquid crystal or a mixture of several types of nematic liquid crystals,and assumes a predetermined orientation state between two alignmentfilms.

Besides the data line driving circuit 101, the scanning ling drivingcircuits 104, and the sampling circuit 301, a pre-charge circuit forsupplying a pre-charge signal in a predetermined voltage level to eachof the plurality of data lines before image signals, an inspectioncircuit for inspecting the quality and defects of the electro-opticaldevice in the course of manufacture and at the time of shipment may beformed on the TFT array substrate 10 shown in FIGS. 1 and 2.

Next, the circuit configurations and the operation of theelectro-optical device having the above construction will be describedbelow with reference to FIG. 3. FIG. 3 is a block diagram showingequivalent circuits comprising various elements of the plurality ofpixels formed in a matrix in the image display region, and wirings, andthe peripheral circuits in the electro-optical device.

In the electro-optical device of this embodiment shown in FIG. 3, thepixel electrode 9 a and a TFT 30 for controlling switching of thecorresponding pixel electrode 9 a are formed for each of the pluralityof pixels formed in a matrix to form the image display region, and adata line 6 a, to which image signals are supplied, is electricallyconnected to the source of the corresponding TFT 30.

In the peripheral region outside the image display region 10 a, an end(the lower end in FIG. 3) of each of the data lines 6 a is connected tothe drain of a corresponding TFT 202 constituting the sampling circuit301. On the other hand, image signal lines 115 are respectivelyconnected, through lead wirings 116, to the sources of the TFTs 202constituting the sampling circuit 301. Furthermore, sampling circuitdriving signal lines 114 connected to the data line driving circuit 101are respectively connected to the gates of the TFTs 202 constituting thesampling circuit 301. Therefore, image signals S1, S2, . . . , Snsupplied through the image signal lines 115 are sampled by the samplingcircuit 301 according to the sampling circuit driving signals suppliedfrom the data line driving circuit 101 through the sampling circuitdriving signal lines 114, and then supplied to the respective data lines6 a.

The image signals S1, S2, . . . , Sn written in the data lines 6 a maybe sequentially supplied in that order, or may be supplied to each groupcomprising a plurality of adjacent data lines 6 a.

The scanning lines 3 a are also electrically connected to the gates ofthe pixel switching TFTs 30 so that pulsed scanning signals G1, G2, . .. , Gm are line-sequentially supplied, in that order, to the scanninglines 3 a from the scanning line driving circuits 104 with predeterminedtiming. The pixel electrodes 9 a are respectively electrically connectedto the drains of the TFTs 30, and the switches of each of the TFTs 30serving as the switching elements are closed for a predetermined time towrite the image signals S1, S2, . . . , Sn supplied from the data lines6 a with predetermined timing. The image signals S1, S2, . . . , Sn inthe predetermined level written in the liquid crystal as an example ofelectro-optical materials through the pixel electrodes 9 a are storedbetween the TFT array substrate 10 and the counter electrode 21 formedon the counter substrate 20 for a predetermined time. The orientationand order of the molecules of the liquid crystal vary with the potentiallevel applied to modulate light, thereby permitting a gray-scaledisplay. In a normally white mode, the transmittance of incident lightdecreases according to the voltage applied by pixel, while in a normallyblack mode, the transmittance of incident light increases according tothe voltage applied by pixel. As a result, light having contrastcorresponding to the image signals is emitted from the electro-opticaldevice as a whole. In order to prevent a leakage of the image signalsstored, a storage capacitor 70 is added in parallel with a liquidcapacitance formed between each of the pixel electrodes 9 a and thecounter electrode 21. Also, capacitance lines 300 fixed at apredetermined potential and containing fixed potential-side electrodesof the storage capacitor 70 are provided in parallel with the scanninglines 3 a.

With respect to the detailed configuration of the frame regioncomprising the frame shielding film 53 and the peripheral region of theelectro-optical device shown in FIGS. 1 and 2, the structure and thefunction of the lower shielding film 501 provided in the frame regionare mainly described with reference to FIGS. 4 to 7. FIG. 4 is anenlarged partial sectional view showing the vicinity of the CR portionshown in FIG. 2, and FIG. 5 is an enlarged partial sectional viewshowing a portion of a comparative example, which corresponds to thevicinity of the CR portion shown in FIG. 2. FIG. 6 is a schematicpartial perspective view showing a portion including the frame shieldingfilm 53, lead wirings 206 of the data lines 6 a, and the lower shieldingfilm 501 shown in FIG. 4, and FIG. 7 a schematic partial perspectiveview showing a portion including the frame shielding film 53 and thelead wirings 206 of the data lines in the comparative example.

As shown in FIG. 4, in this embodiment, various wirings such as the leadwirings 206 of the data lines 6 a, and various circuit elements such asthe TFTs constituting the sampling circuit 301 are disposed as anexample of a pattern portion in the frame region below the frameshielding film 53. The lower shielding film 501 is provided below thelead wirings 206 provided in the frame region.

In the comparative example shown in FIG. 5, the lower shielding film 501is not provided.

As shown in FIG. 6, in this embodiment, therefore, when incident lightL1 incident from above has high strength and contains a large quantityof oblique component, as in application to a projector, the incidentlight L1 is reflected by the surfaces of the lead wirings 206 formed bypatterning a conductive film of an A1 film, or the incident light passesthrough the spaces between the lead wirings 206 according to thereflectance of the lead wirings 206. The TFT array substrate side (thelower side in FIG. 6) of the lead wirings 206 is covered with the lowershielding film 501. Therefore, of the incident light L1 reflected by thelead wirings 206 or passing through the spaces between the lead wirings206 in the vicinity of the periphery of the frame region, i.e., thevicinity of the periphery of the image display region 10 a, the quantityof light L3 finally mixed with emitted light L_(out) for displaydirectly or after internal reflection is significantly decreased by aquality corresponding to the quantity of light absorbed or reflected bythe lower shielding film 501.

More specifically, as shown in FIGS. 4 and 6, when light reflected bythe lead wirings 206 travels toward the TFT array substrate 10 near theframe shielding film 53 because the light is reflected by the innersurface of the frame shielding film 53, the quantity of light mixed withthe emitted light L_(out) for display is decreased by a quantitycorresponding to the quantity of light absorbed or reflected by thelower shielding film 501. With respect to return light L2 produced wheninternally reflected light, which is reflected by the frame shieldingfilm 53, and light, which is transmitted through the lead wirings 206,are reflected by the back side of the TFT array substrate 10 and apolarizing plate, a retardation plate, and dustproof glass, which areprovided on the outside of the TFT arrays substrate, the quantity oflight finally mixed with the emitted light L_(out) for display isdecreased by a quantity corresponding to the quantity of light absorbedor reflected by the lower shielding film 501. Furthermore, in amulti-substrate projector, with respect to internally reflected lightproduced by further reflection of the return light L2 by the leadwirings 206 and the frame shielding film 53, the quantity of lightfinally mixed with the emitted light L_(out) for display is decreased bya quantity corresponding to the quantity of light absorbed or reflectedby the lower shielding film 501.

The electro-optical device is contained in a light-shielding mountingcase 800 comprising a resin or the like, and thus leakage light in themounting case 800 is absorbed by the inner surface of the mounting case800, causing no problem.

On the other hand, as shown in the comparative example shown in FIGS. 5and 7 in which the lower shielding film 501 is not provided, of theincident light L1 reflected by the lead wirings 206 or passing throughthe spaces between the lead wirings 206 in the vicinity of the peripheryof the frame region, i.e., the vicinity of the periphery of the imagedisplay region 10 a, the quantity of light L finally mixed with emittedlight L_(out) for display directly or after internal reflection issignificantly increased, as compared with this embodiment comprising thelower shielding film 501. In addition, in the comparative example, withrespect to the return light L2 near the frame region, i.e., near theperiphery of the image display region 10 a, the quantity of lightreflected by the lead wirings 206 or passing through the spaces betweenthe lead wirings 206, further reflected by the inner surface of theframe shielding film, and finally mixed with emitted light L_(out) fordisplay directly or after internal reflection is significantlyincreased, as compared with this embodiment comprising the lowershielding film 501.

Therefore, in this embodiment comprising the lower shielding film 501provided below the pattern portion comprising the lead wirings 206, itis possible to decrease the occurrence of light having a light-darkpattern due to the light and shade of the pattern portion andinterference of light in the emitted light L_(out) for display near theperiphery of the image display region 10 a. Therefore, it is effectivelypossible to prevent the occurrence of the light-dark pattern due to thepattern portion near the outside of the display image.

In this embodiment, the lower shielding film 501 is preferably formeddirectly on the flat surface of the TFT array substrate 10, or on a flatunderlying insulating film deposited on the flat TFT array substrate 10.In this case, substantially no irregularity occurs in the surface of thelower shielding film 501. Therefore, even if the incident light L1 andreturn light L2 shown in FIGS. 5 and 7 are partially reflected by thelower shielding film 501, and finally mixed with the emitted lightL_(out) for display, light reflected by the flat lower shielding film501 has substantially no interference, and thus the light-dark patterndue to interference can be significantly decreased.

The lower shielding film 501 comprises a single metal, an alloy, a metalsilicide, or a polysilicide, which contains at least one ofhigh-melting-point metals, for example, Ti (titanium), Cr (chromium), W(tungsten), Ta (tantalum), Mo (molybdenum), and the like, or a laminatedlayer of these materials. The lower shielding film 501 is preferablyformed by using the same film as a lower shielding film for covering thelower sides of the channel regions of the pixel switching TFTs 30 in theimage display region. Therefore, the lower shielding film for shieldingthe pixel switching TFTs 30 and the lower shielding film 501 forpreventing the occurrence of the light-dark pattern in the frame regioncan be simultaneously formed in the same manufacturing process. Thus, itis possible to simplify the laminated structure on the TFT arraysubstrate 10 and the manufacturing process.

In the lower shielding film 501, light shielding may be mainly performedby reflection, light absorption, or both reflection and absorption. Inthe case in which light shielding is mainly performed by absorption, theincident light L1 and the return light L2 near the frame region can beattenuated at each time of incidence on the light-absorbing filmconstituting the lower shielding film 501. Particular, when the returnlight L2 is a problem, the lower shielding film 501 may be formed in atwo-layer or multi-layer structure comprising a light-absorbing layerformed on the TFT array substrate 10 side (lower side), and a reflectingfilm formed on the opposite side (upper side). On the other hand, whenthe incident light L1 is a problem, the lower shielding film 501 may beformed in a two-layer or multi-layer structure comprising alight-absorbing layer formed on the counter substrate 20 side (upperside), and a reflecting film formed on the opposite side (lower side).The light-absorbing layer comprises, for example, at least one of apolysilicon film and a high-melting-point metal film.

Furthermore, the lower shielding film 501 is preferably formed inseparated islands having a proper size unit. When the lower shieldingfilm 501 is formed in the separated islands, the occurrence of stressdue to the lower shielding film 501 can be relieved, as compared with acase in which the lower shielding film is formed over the entire frameregion.

In this embodiment, as shown in FIG. 4, the lower shielding film 501 isformed with an overlap width ΔW in the region extending from the outeredge of the image display region 10 a to the peripheral side. Theoverlap width ΔW is can be previously set according to the incidenceangle of the incident light L1 applied to the frame region. Inapplication to a projector for extended projection, the incidence angleis generally large, and thus the overlap width ΔW must be increased forpreventing the occurrence of the light-dark pattern. The predeterminedwidth can be separately set by experiment, experience or simulation, orthe like in consideration of the specifications of the actual device.

A description will now be made of the construction of an image displayregion of an electro-optical device according to an embodiment of thepresent invention with reference to FIGS. 8 and 9. FIG. 8 is a plan viewshowing a plurality of adjacent pixel groups on a TFT array substrate onwhich data lines, scanning lines, pixel electrodes, etc. are formed.FIG. 9 is a sectional view taken along ling E–E′ in FIG. 8. In FIG. 9,layers and members are shown on different contraction scales in order toshow the layers and members each having a recognizable size in thisfigure.

In FIG. 8, on the TFT array substrate of the electro-optical device, aplurality of transparent pixel electrodes 9 a (with the outer linesshown by dotted lines 9 a′) is provided in a matrix, and data lines 6 aand scanning lines 3 a are provided along the longitudinal and lateralboundaries between the pixel electrodes 9 a.

Also, the scanning lines 3 a are disposed so as to face channel regions1 a′ of a semiconductor layer 1 a, the channel regions 1 a′ being shownby oblique lines in the figure, and the scanning lines 3 a function asgate electrodes. Furthermore, a pixel switching TFT 30 in which thecorresponding scanning line 3 a is opposed as the gate electrode to thechannel region 1 a′ is provided at each of the intersections of thescanning lines 3 a and the data lines 6 a.

As shown in FIGS. 8 and 9, a relay layer 71 as a pixel potential-sidecapacitance electrode, which is connected to the high-concentrationdrain region 1 e of each TFT 30 and each of the pixel electrodes 9 a, isdisposed opposite to a portion of a capacitance line 300 as a fixedpotential-side capacitance electrode through a dielectric film 75 toform a storage capacitance 70.

In a plan view, the capacitance lines 300 are formed in stripesextending along the scanning lines 3 a, and the portions overlappingwith the TFTs 30 project upward and downward in FIG. 8. Each of thecapacitance lines 300 preferably comprises a multilayer laminatedstructure comprising a first film comprising a conductive polysiliconfilm having a thickness of about 50 nm, and a second film comprising ametal silicide film containing a high-melting-point metal and having athickness of about 150 nm. In this structure, the second film functionsnot only as the fixed potential-side capacitance electrode of each ofthe capacitance lines 300 or the storage capacitors 70, but also as ashielding layer for shielding the upper side of the corresponding TFT 30from incident light.

Particularly, in this embodiment, the capacitance lines 300 are formedbetween the scanning lines 3 a and the data lines 6 a, and thuscapacitances are formed in the regions overlapping with the scanninglines 3 a and the data lines 6 a, thereby increasing the storagecapacitors 70.

On the other hand, a lower shielding film 11 a is formed in a latticeshape below the TFTs 30 on the TFT array substrate 10. The lowershielding film 11 a comprises a single metal, an alloy, a metalsilicide, or a polysilicide comprising at least one ofhigh-melting-point metals, for example, Ti, Cr, W, Ta, Mo, and the like,or a laminated film thereof.

Furthermore, the data lines 6 a extending in the longitudinal directionof FIG. 8 and the capacitance lines 300 extending in the lateraldirection of FIG. 8 are formed to cross each other, and the lowershielding film 11 a is formed in a lattice shape, to define the apertureregions of the respective pixels.

As shown in FIGS. 8 and 9, the data lines 6 a are electricallyconnected, through contact holes 81, to the high-concentration sourceregions 1 d of the semiconductor layers 1 a each comprising, forexample, a polysilicon film. A relay layer comprising the same film asthe relay layer 71 may be formed for electrically connecting the datalines 6 a and the high-concentration source regions 1 d through therelay layer and two contact holes.

The capacitance lines 300 are preferably extended from the image displayregion 10 a (refer to FIG. 1), in which the pixel electrodes 9 a aredisposed to the periphery thereof, and electrically connected, to aconstant potential source to have a fixed potential. As the constantpotential source, a constant potential source for positive power andnegative power supplied to the data line driving circuit 101 and thescanning line driving circuits 104 may be used, or a constant potentialsupplied to the counter electrode 21 of the counter substrate 20 may beused. Furthermore, like the capacitance lines 300, the lower shieldingfilm 11 a provided below the TFTs 30 may be extended from the imagedisplay region 10 a to the periphery thereof, and connected to aconstant potential source for avoiding an adverse effect of a variationin the potential on the TFTs 30.

The pixel electrodes 9 a are electrically connected to thehigh-concentration drain regions 1 e of the semiconductor layers 1 athrough the relay layers 71 and the contact holes 83 and 85.

In FIGS. 8 and 9, the electro-optical device comprises the transparentTFT array substrate 10, and the transparent counter substrate 20 opposedto the TFT array substrate 10. The TFT array substrate 10 comprises, forexample, a quartz substrate, a glass substrate, or a silicon substrate,and the counter substrate 20 comprises, for example, a glass substrateor a quartz substrate.

As shown in FIG. 9, the pixel electrodes 9 a are provided on the TFTarray substrate 10, and an alignment film 16 subjected to apredetermined orientation treatment such as rubbing or the like isprovided on the pixel electrodes 9 a. Each of the pixel electrodes 9 acomprises, for example, a transparent conductive film such as an ITOfilm or the like. The alignment film 16 comprises, for example, atransparent organic film such as a polyimide film or the like.

On the other hand, on the counter substrate 20, the counter electrode 21is formed over the entire surface, and an alignment film 22 subjected toa predetermined orientation treatment such as rubbing or the like isprovided below the counter electrode 21. The counter electrode 21comprises, for example, a transparent conductive film such as an ITOfilm or the like. The alignment film 22 comprises a transparent organicfilm such as a polyimide film or the like.

Furthermore, on the counter substrate 20, a shielding film may beprovided in a lattice shape or stripes corresponding to the non-apertureregions of the respective pixels. In this structure, the capacitancelines 300 and the data lines 6 a, which define the aperture regions asdescribed above, and the shielding film on the counter substrate 20 cansecurely prevent incident light from the counter substrate 20 side frombeing incident on the channel regions 1 a′, the low-concentration sourceregions 1 b and the low-concentration drain regions 1 c. Furthermore,when the shielding film on the counter substrate 20 comprises ahigh-reflection film formed on at least the incidence side, theshielding film functions to prevent a temperature rise of theelectro-optical device. The shielding film on the counter substrate 20is preferably formed with a small width within the non-aperture regionso as not to narrow the aperture regions of the respective pixels whenboth substrates are bonded together. Even with the narrow shieldingfilm, redundant light can be shielded, and the effect of preventing atemperature rise in the electro-optical device due to incident light canbe exhibited.

In the above-described construction, a liquid crystal as an example ofelectro-optical materials is sealed in the space surrounded by thesealing material (refer to FIGS. 1 and 2) between the TFT arraysubstrate 10 and the counter substrate 20, which are disposed so thatthe pixel electrodes 9 a face the counter electrode 21, to form a liquidcrystal layer 50.

Furthermore, an underlying insulating film 12 is provided below thepixel switching TFTs 30. The underlying insulating film 12 has not onlythe function to insulate the TFTs 30 from the lower shielding film 11 a,but also the function to prevent a change in the characteristics of thepixel switching TFTs 30 due to roughening at the time of polishing ofthe surface of the TFT array substrate 10, or strains remaining aftercleaning, because the underlying insulating film 12 is formed over theentire surface of the TFT array substrate 10.

In FIG. 9, each of the pixel switching TFTs 30 has a LDD (Lightly DopedDrain) structure comprising the corresponding scanning line 3 a, thechannel region 1 a′ of the semiconductor layer 1 a in which the channelis formed by an electric field from the scanning line 3 a, theinsulating film 2 comprising a gate insulating film for insulating thescanning line 3 a from the semiconductor layer 1 a, thelow-concentration source region 1 b and the low-concentration drainregion 1 c of the semiconductor layer 1 a, and the high-concentrationsource region 1 d and the high-concentration drain region 1 e of thesemiconductor layer 1 a.

Furthermore, a first interlayer insulating film 41 is formed on thescanning lines 3 a, the contact holes 81 reaching the high-concentrationsource regions 1 d, and the contact holes 83 reaching thehigh-concentration drain regions 1 e being formed in the firstinterlayer insulating film 41.

The relay layers 71 and the capacitance lines 300 are formed on thefirst interlayer insulating film 41, and a second interlayer insulatingfilm 42 is formed thereon, the contact holes 81 reaching thehigh-concentration source regions 1 d, and the contact holes 85 reachingthe relay layers 71 being formed in the second interlayer insulatingfilm 42.

The data lines 6 a are formed on the second interlayer insulating film42, and a planarized third interlayer insulating film 43 is formed onthe data lines 6 a, the contact holes 85 reaching the relay layers 71being formed in the third interlayer insulating film 43. The pixelelectrodes 9 a are provided on the upper surface of the third interlayerinsulating film 43.

In this embodiment, the surface of the third interlayer insulating film43 is planarized by CMP (Chemical Mechanical Polishing) processing orthe like to decrease orientation defects in the liquid crystal in theliquid crystal layer 50 due to the steps caused by the wirings and theelements provided below the third interlayer insulating film 43.

As described above, in the first embodiment, the lower shielding film501 is provided to decrease the light-dark pattern projected near theoutside of the display image due to the pattern portion comprising thewirings such as the lead wirings of the data lines, and the circuitelements such as the TFTs 202, which are provided in the frame region.Therefore, the frame shielding film 53 need not be wide for concealingthe light-dark pattern, thereby permitting the formation of the largeimage display region 10 a.

In addition, in the first embodiment, the lower shielding film 501 isprovided in a portion corresponding to the pattern portion comprisingthe wirings such as the lead wirings of the data lines, and the circuitelements such as the TFTs 202, which are provided in the frame region,not formed over the entire frame region. Therefore, the occurrence ofstress can be decreased, as compared with a case in which the lowershielding film is formed over the entire frame region.

In the above-described embodiment, as shown in FIG. 9, the surface ofthe third interlayer insulating film 43 is planarized to decrease thesteps which are produced in the regions of the surface (the surface ofthe third interlayer insulating film 43) below the pixel electrodes 9 aalong the data lines 6 a and the scanning lines 3 a by lamination ofmany conductive layers. However, instead of or in addition to this,grooves may be formed in the TFT array substrate 10, the underlyinginsulating film 12, the first interlayer insulating film 41, the secondinterlayer insulating film 42 or the third interlayer insulating film 43so that the wirings such as the data lines 6 a and the like, and theTFTs 30 are buried in the grooves to planarize the surface.Alternatively, the upper surface of the second interlayer insulatingfilm 42 may be planarized by CMP processing or using an organic orinorganic SOG to planarize the surface.

Next, second to fourth embodiments relating to examples of the planarshape of the lower shielding film 501 having the above structure, andmodified embodiments thereof will be described below. In each of theseembodiments, the lower shielding film 501 comprises a light shieldingconductive film. Therefore, each of the embodiments relates to anexample of the shape of the lower shielding film 501 suitable fordecreasing the adverse effect of variations in the electrical state orpotential of the lower shielding film 501 disposed in the frame regionon the operation of the circuit elements such as the TFTs 202 disposedin the same frame region.

(Second Embodiment)

An electro-optical device according to a second embodiment of thepresent invention will be described with reference to FIGS. 10 and 11.FIG. 10 is an enlarged plan view of a complementary TFT as an example ofa circuit element formed in the frame region in the second embodiment,and FIG. 11 is a sectional view taken along line A–A′ in FIG. 10. InFIGS. 10 and 11, the same components as the first embodiment shown inFIGS. 1 to 9 are denoted by the same reference numerals, and adescription thereof is omitted.

As shown in FIGS. 10 and 11, a complementary TFT 202 a comprises asemiconductor layer 320 comprising a P-channel region 320 p and aN-channel region 320 n. Also, the complementary TFT 202 a comprises acombination of a P-channel TFT 202 p and a N-channel TFT 202 ncomprising an end of wiring 316 as a gate electrode (input side), endsof low-potential wiring 321 and high-potential wiring 322 as sourceelectrodes, and an end of wirings 306 as a drain electrode (outputside). Like the pixel switching TFTs 30, each of the P-channel TFT 202 pand the N-channel TFT 202 n may have a LDD structure. Particularly, inthe second embodiment, a lower shielding film 501 a comprising aconductive film such as a high-melting-point metal film is formed inseparated islands, and each island portion covering at least the lowerside of the complementary TFT 202 a has a floating potential. The othercomponents are the same as the first embodiment described above withreference to FIGS. 1 to 9.

Therefore, in the second embodiment, the lower shielding film 501 a hasa floating potential, and thus the adverse effect of a variation in thepotential of the lower shielding film 501 on the characteristics of thecomplementary TFT 202 a can be effectively prevented.

In the second embodiment, like the lower shielding film 11 a provided inthe image display region 10 a, the lower shielding film 501 a except theislands portions facing the complementary TFTs 202 a may be formed insuch a manner that a fixed potential is supplied thereto.

(Third Embodiment)

An electro-optical device according to a third embodiment of the presentinvention will be described with reference to FIGS. 12 and 13. FIG. 12is an enlarged plan view of a complementary TFT as an example of acircuit element formed in the frame region in the third embodiment, andFIG. 13 is a sectional view taken along line B–B′ in FIG. 12. In FIGS.12 and 13, the same components as the first embodiment shown in FIGS. 1to 9 and the second embodiment shown in FIGS. 10 and 11 are denoted bythe same reference numerals, and a description thereof is omitted.

As shown in FIGS. 12 and 13, in the third embodiment, unlike in thesecond embodiment, particularly a lower shielding film 501 b comprisinga conductive film such as a high-melting-point metal film is not formedin separated islands, but two slits are formed along two gate electrodesof each complementary TFT 202 b. The other components are the same asthe second embodiment described above with reference to FIGS. 10 and 11.

Therefore, in the third embodiment, it is possible to decreasecapacitance coupling between the source and drain electrodes of eachcomplementary TFT 202 b due to the parasitic capacitance between thelower shielding film 501 b and the source electrode, and the parasiticcapacitance between the lower shielding film 501 b and the drainelectrode, thereby effectively preventing the adverse effect of avariation in the potential of the lower shielding film 501 b on thecharacteristics of the complementary TFTs 202 b.

The lower shielding film 501 b may have the slits each having a widthof, for example, about 1 μm. Even when such slits are formed, the slitscause only a relatively small light-dark pattern because the gateelectrodes comprising a conductive polysilicon film exhibit some lightabsorbability.

In the third embodiment, like the lower shielding film 11 a provided inthe image display region 10 a, the lower shielding film 502 b may beformed in such a manner that a fixed potential is supplied theretothrough an extended portion 502.

(Fourth Embodiment)

An electro-optical device according to a fourth embodiment of thepresent invention will be described with reference to FIGS. 14 and 15.FIG. 14 is an enlarged plan view of a complementary TFT as an example ofa circuit element formed in the frame region in the fourth embodiment,and FIG. 15 is a sectional view taken along line C–C′ in FIG. 14. InFIGS. 14 and 15, the same components as the first embodiment shown inFIGS. 1 to 9 and the second embodiment shown in FIGS. 10 and 11 aredenoted by the same reference numerals, and a description thereof isomitted.

As shown in FIGS. 14 and 15, in the fourth embodiment, unlike in thefirst embodiment, particularly a lower shielding film 501 c comprising aconductive film such as a high-melting-point metal film is not formed inseparated large islands based on the semiconductor layers 320 ofcomplementary TFTs, but formed in separated small islands based on thesource and drain regions of the semiconductor layer 320 of eachcomplementary TFT 202 c. The other components are the same as the secondembodiment described above with reference to FIGS. 10 and 11.

Therefore, in the fourth embodiment, it is possible to decreasecapacitance coupling between the source and drain electrodes of eachcomplementary TFT 202 c due to the parasitic capacitance between thelower shielding film 501 c and the source electrode, and the parasiticcapacitance between the lower shielding film 501 c and the drainelectrode, thereby effectively preventing the adverse effect of avariation in the potential of the lower shielding film 501 c on thecharacteristics of the complementary TFTs 202 c.

The spaces between the small islands of the lower shielding film 501 cmay be, for example, about 1 μm. Even when such spaces are formed, thespaces cause only a relatively small light-dark pattern because the gateelectrode comprising a conductive polysilicon film exhibits some extentof light absorbability.

In the fourth embodiment, like the lower shielding film 11 a provided inthe image display region 10 a, the lower shielding film 502 c except theisland portions facing the complementary TFTs 202 c may be formed insuch a manner that a fixed potential is supplied thereto.

(Fifth Embodiment)

An electro-optical device according to a fifth embodiment of the presentinvention will be described with reference to FIGS. 16 and 17. FIG. 16is an enlarged plan view of a complementary TFT as an example of acircuit element formed in the frame region in the fifth embodiment, andFIG. 17 is a sectional view taken along line D–D′ in FIG. 16. In FIGS.16 and 17, the same components as the first embodiment shown in FIGS. 1to 9 and the second embodiment shown in FIGS. 10 and 11 are denoted bythe same reference numerals, and a description thereof is omitted.

As shown in FIGS. 16 and 17, in the fifth embodiment, particularly alower shielding film 501 d comprising a conductive film such as ahigh-melting-point metal film is formed in separated large islands basedon the semiconductor layers 320 of complementary TFTs, but unlike in thesecond embodiment, the island portions do not have a floating potential.Each of the island portions is connected to the gate electrode (theinput side) at an end of wiring 316 through a contact hole 503 to havethe same potential as the gate electrode. The other components are thesame as the second embodiment described above with reference to FIGS. 10and 11.

Therefore, in the fifth embodiment, back channels can be formed by theisland portions of the lower shielding film 501 d, thereby improving thetransistor characteristics of the complementary TFTs 202 d.

In the fifth embodiment, like the lower shielding film 11 a provided inthe image display region 10 a, the lower shielding film 502 d except theisland portions facing the complementary TFTs 202 d may be formed insuch a manner that a fixed potential is supplied thereto.

In each of the above-described embodiments described above withreference to FIGS. 1 to 17, the data line driving circuit 101 and thescanning line driving circuit 104 may be electrically and mechanicallyconnected to a driving LSI, which is mounted on, for example, a TAB(Tape Automated Bonding) substrate, through an anisotropic conductivefilm provided in the periphery of the TFT array substrate 10 instead ofbeing provided on the TFT array substrate 10. Furthermore, a polarizingfilm, a retardation film, a polarizing plate, and the like are providedin any desired direction on each of the incidence side of the countersubstrate 20 and the emission side of the TFT array substrate 10according to the operation mode, for example, a TN (Twisted Nematic)mode, a VA (Vertically Aligned) mode, a PDLC (Polymer Dispersed LiquidCrystal) mode, or the like, and a normally white mode/normally blackmode.

(Sixth Embodiment)

An electro-optical device according to a sixth embodiment of the presentinvention will be described with reference to FIGS. 18 to 20. FIG. 18 isan enlarged plan view of a portion in the sixth embodiment, whichcorresponds to the portion A shown in FIG. 1, and FIG. 19 is an enlargedplan view of a portion in a comparative example, which corresponds tothe portion A shown in FIG. 1. FIG. 20 is an enlarged sectional view ofa portion in the sixth embodiment, which corresponds to the portion CRshown in FIG. 2. In FIGS. 18 to 20, the same components as the firstembodiment shown in FIGS. 1 to 9 and the second embodiment shown inFIGS. 10 and 11 are denoted by the same reference numerals, and adescription thereof is omitted.

In FIG. 18, as described above in the first embodiment, the lead wirings206 of the data lines 6 a are formed on the TFT array substrate 10, andTFTs 202 a constituting the sample circuit 301 described above withreference to FIG. 3 are respectively connected to ends of the leadwirings 206. Furthermore, in FIG. 18, lead wirings 208 (corresponding toan example of the “pattern portion” of the present invention) of thescanning lines 3 a are formed. A scanning line driving circuit (refer toFIG. 1) is connected to the extended end (not shown in the drawing) ofthe lead wirings 208. Also, in FIG. 18, various wirings 210 and 212 areformed for supplying a predetermined potential to the counter electrodeon the counter substrate 20 (refer to the vertical conductive materials106 shown in FIG. 1). Furthermore, like in the above embodiments, thelower shielding films 501 and 501 a are formed for decreasing the numberof the lead wirings 206 a or the TFTs 202 a and for partially coveringthe TFT array substrate 10 sides thereof (refer to FIGS. 4 to 6 or FIGS.10 and 11). The wirings 210 and 121 correspond to an example of a“second pattern portion” in the sixth embodiment.

Particularly, in the sixth embodiment, besides the lower shielding films501 and 501 a, a lower shielding film 11 a (refer to FIG. 9) is formedto cover the TFT array substrate 10 sides of the TFTs 30 serving as thepixel switching elements formed in the image display region 10 a, and anout-of-region shielding film 501A is formed to cover the entireperipheral region around the image display region 10 a. All the threetypes of the shielding films are simultaneously formed as the same filmin a manufacturing step.

Of these shielding films, the structure of the out-of-region shieldingfilm 501A is described in detail below with reference to FIG. 18.

The lower shielding film 501 is formed to cover the lead wirings 206, asshown in the upper left portion of FIG. 18 (refer to FIG. 4 or 6). Thelower shielding film 501 a is formed to cover the TFTs 202 aconstituting the sample circuit 301 as shown in a middle portion of FIG.18 (refer to FIG. 10 or 11). In addition, in FIG. 18, a lower shieldingfilm 501 z is provided to cover the lead wirings 208 led from thescanning lines 3 a. These shielding films have the same purpose andexhibit the same function as the lower shielding film in the aboveembodiments.

The out-of-region shielding film 501A of the sixth embodiment comprisesa second lower shielding film 501Aa formed in the region R1 other thanthe region in which the lower shielding films 501 a and 501 a areformed, integrally with the lower shielding films 501 a and 501 a.Namely, the second lower shielding film 501Aa is formed in the region R1other than the region in which the lead wirings 206 or the TFTs 202 aare formed, in the frame region (shown by thick lines in FIG. 18).Furthermore, the out-of-region shielding film 501A comprises a trueout-of-region shielding film 501Ab formed between the wirings 210 and212 provided in the region R of the frame region. The true out-of-regionshielding film 501Ab may be not formed below the wirings 210 and 212.Namely, the true out-of-region shielding film 501Ab is divided.

In brief, in the sixth embodiment, the out-of-region shielding film 501Ais formed to cover almost the entire region of the TFT array substrate10 except in some cases in which the out-of-region shielding film 501Ais not formed in the region in which the wirings or the circuit elementsare formed, as the wirings 210 or 212.

As shown in FIG. 18, slits are formed at appropriate positions of theout-of-region shielding film 501A. Namely, the out-of-region shieldingfilm 501A is divided into islands. In the sixth embodiment, the distancebetween the islands of the out-of-region shielding film 501A is set to 2μm or less. The out-of-region shielding film 501A having such a shapecan be easily formed by proper patterning.

The out-of-region shielding film 501A has the following function: In thecomparative example shown in FIG. 19 in which the out-of-regionshielding film 501A of the sixth embodiment is not formed, the portionof the TFT array substrate 10, which corresponds to the out-of-regionshielding film 501A, is exposed (of course, the various interlayerinsulating films 12, 41, 42 and 43 are formed). Therefore, incidentlight possibly passes “directly” through that portion, and is possiblymixed with light L_(out) (refer to FIG. 4 or 6) for forming a displayimage to affect the image display. For example, when the above-describedreturn light passes through the region R1, is reflected by the frameshielding film 53, and again passes through the region R1, the light ishighly likely to be mixed with the light L_(out) for forming the displayimage, thereby possibly causing a dim light image near the edge of theimage.

However, in the sixth embodiment, as described above, the out-of-regionshielding film 501A comprising the second lower shielding film 501Aa andthe true out-of-region shielding film 501Ab is formed in the regions R1and R2, thereby preventing the above phenomenon. Therefore, in the sixthembodiment, it is possible to prevent the occurrence of a dim lightimage near the edge of the display image, and display a higher-qualityimage with a good appearance.

In the sixth embodiment, the out-of-region shielding film 501A isdivided as described above, or the true out-of-region shielding film501Ab formed between the wirings 210 and 212 is divided into large partsaccording to place. Therefore, the internal stress can be relativelydecreased, as compared with a case in which such a shielding film isformed over the entire region. It is thus possible to prevent thephenomenon that the out-of-region shielding film 501A is broken by itsown internal stress, or cracks occur in the peripheral components (forexample, the underlying insulating film 12, and the like), therebyproviding an electro-optical device with high reliability.

When the out-of-region shielding film 501A is divided into islands inthe region R1, the distance between the islands is 2 μm or less.Therefore, light passing though the spaces between the islands isunlikely to again pass through the spaces after being reflected by theframe shielding film 53 at the back of the out-of-region shielding film501A. Consequently, the light is highly unlikely to be mixed with thelight L_(out) for forming the display image, thereby significantlydecreasing the influence of the spaces on the display image. Therefore,in the sixth embodiment, it is possible to obtain the initial effect ofthe out-of-region shielding film 501A, i.e., the function to prevent theoccurrence of a light image around the display image, while obtainingthe function of the island-formed shielding film 501A, i.e., thefunction to decrease internal stress.

Although, in the sixth embodiment, the out-of-region shielding film 501Ais formed to cover almost the entire surface of the TFT array substrate,the out-of-region shielding film 501A is not necessarily formed over theentire surface of the TFT array substrate 10 from the viewpoint of thepresent invention. In fact, in FIGS. 18 and 19, the out-of-regionshielding film 501A is divided at an appropriate position, and it isthus apparent that the out-of-region shielding film 501A is notnecessarily formed over the entire region of the TFT array substrate 10.

More specifically, for example, the out-of-region shielding film of thepresent invention may be formed only in the portion WW shown in FIG. 20.In FIG. 20, the portion WW is positioned between the edge 801 a of thedisplay window formed in the mounting case and the edge of the lowershielding film 501. This is because traveling of light is cut off by themounting case 801 in the portions other than the portion WW, and it isthus thought that the “direct” passage of light substantially occursonly in the portion WW. It is thus sufficient that the out-of-regionshielding film is formed only in the portion WW (refer to referencenumeral 501B or traveling of light LA).

In this embodiment, light shielding can be effectively realized, and theoccurrence of the problem due to the internal stress of theout-of-region shielding film 501B shown in FIG. 20 can be suppressedbecause the out-of-region shielding film 501B is formed in anappropriate necessary area.

Since the electro-optical device of each of the embodiments is appliedto a projector, three electro-optical devices are respectively used asRGB light values, and color lights, which are produced by separationthrough RGB color separation dichroic mirrors, are respectively incidentas incident lights on the light valves. In each of the embodiments, acolor filter is not provided on the counter substrate 20. However, inthe counter substrate 20, a RGB color filter may be formed inpredetermined regions facing the pixel electrodes 9 a together with aprotective film. In this case, besides the projector, theelectro-optical device of each of the embodiments can be applied to adirect viewing or reflective color electro-optical device.Alternatively, a microlens may be formed on the counter substrate 20corresponding to each of the pixels. A color filter layer may be formed,by using color resist, below the pixel electrodes 9 a facing the RGBcolors formed on the TFT array substrate 10. In this case, theefficiency of convergence of incident light can be improved to realize abright electro-optical device. Furthermore, interference layers havingdifferent refractive indexes may be deposited on the counter substrate20 to form a dichroic filter for making the RGB colors by usinginterference of light. By using the counter substrate with the dichroicfilter, a brighter color electro-optical device can be realized.

(Electronic Apparatus According to Embodiment)

The whole construction, particularly the optical construction, of aprojection color display device will be described as an example of anelectronic apparatus using one of the above-described electro-opticaldevices as a light valve according to an embodiment of the presentinvention. FIG. 21 is a schematic sectional view of a projection colordisplay device.

In FIG. 21, a liquid crystal projector 1100 as an example of theprojection color display device of this embodiment comprises threeliquid crystal modules each comprising a liquid crystal device in whichdriving circuits are mounted on a TFT array substrate, the modules beingrespectively used as RGB light valves 100R, 100G and 100B. In the liquidcrystal projector 1100, when incident light is emitted from a lamp unit1102 of a white light source such as a metal halide lamp or the like,the incident light is separated into light components R, G and Bcorresponding to the three primary colors RGB by three mirrors 1106 andtwo dichroic mirrors 1108, and these light components are respectivelyintroduced into the light valves 100R, 100G and 100B corresponding tothe respective colors. Particularly, B light is introduced through arelay lens system 1121 comprising an incidence lens 1122, a relay lens1123 and an emission lens 1124 in order to prevent a light loss due to along optical path. Then, the light components corresponding to theprimary colors are modulated by the light valves 100R, 100G and 100B,again combined by a dichroic prism 1112, and projected as a color imageon a screen 1120 through a projector lens 1114.

The electro-optical device of the present invention can also be appliedto an electrophoretic device, an EL device, etc.

The present invention is not limited to the above embodiments, andappropriate modification can be made within the scope of the gist andidea of the present invention, which can be found from the claims andthe specification. The technical field of the present invention alsoinclude an electro-optical device and an electronic apparatus accordingto modified embodiments.

1. An electro-optical device, comprising: a light exit substrate; acounter substrate opposing the light exit substrate; a frame-shapedlight shielding layer disposed over the counter substrate and definingan image display region; a display electrode disposed over the lightexit substrate within the image display region; a pattern portiondisposed over the light exit substrate at a position overlapping withthe frame-shaped light shielding layer and within the image displayregion in plan view, the pattern portion being coupled to the displayelectrode and including a wiring and a transistor, the transistorincluding a source and a drain; a lower light shielding layer outsidethe image display region and in overlap with the frame-shaped lightshielding layer in plan view, the lower light shielding layer coveringthe pattern portion from a light exit side of the light exit substrate,the lower light shielding layer including a drain section confrontingthe drain of the transistor and a source section confronting the sourceof the transistor, the drain section and the source section of the lowerlight shielding layer being island shaped and separated from each otherby a gap so that the drain section and the source section are isolatedfrom each other by the gap, the gap being in a non-overlapping conditionwith the drain and the source in plan view.
 2. An electro-optical deviceaccording to claim 1, wherein the lower light shielding layer is formedover a flat surface of the light exit substrate either directly or via aflat underlying insulating film.
 3. An electro-optical device accordingto claim 1, further comprising: a pixel switching transistor forswitching on and off application of voltage to the display electrode;and another lower light shielding layer disposed below at least thechannel region of the pixel switching transistor, the lower lightshielding layer and the other lower light shielding layer being formedfrom the same layer.
 4. An electro-optical device according to claim 1,wherein the lower light shielding layer is formed from a light-absorbingmaterial.
 5. An electro-optical device according to claim 4, wherein thelight-absorbing material is at least one of polysilicon and a metal filmwith a high melting point.
 6. An electro-optical device according toclaim 1, wherein the lower light shielding layer is formed from anelectrically conductive material.
 7. An electro-optical device accordingto claim 1, wherein the lower light shielding layer is applied at leastlocally with a fixed potential.
 8. An electro-optical device accordingto claim 1, the transistor further including a gate electrode, the slitoverlapping the gate electrode of the transistor in plan view.
 9. Anelectro-optical device according to claim 1, the transistor furtherincluding a channel, the gap overlapping the channel of the transistorin plan view.
 10. An electro-optical device according to claim 1, thetransistor further including a P-channel region and an N-channel regionelectrically connected together through the drain, the lower lightshielding layer extending continuously under the entire drain.